Empirical modeling of LF gate noise in GaAs DCFET in impact ionization regime

The evolution of the 1/f gate noise in GaAs DCFET has been analyzed in the impact ionization regime. As the drain bias Vd is raised, a steep increase of the 1/f gate current noise is observed in correlation with the triggering of the impact ionization mechanism. A novel and empirical model of the 1/f low frequency gate current noise S/sub ig/ measured in the impact ionization regime is proposed. The following relation fits it with an exponential law: S/sub ig/=E exp (-F/Vd) (1/f), which is similar to the well-known dependence of the impact ionization rate /spl alpha/ on the drain bias.