Cart (Loading....) | Create Account
Close category search window
 

Post-chemical-mechanical planarization cleaning application in metallization

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Huynh, C. ; Microelectron. Div., IBM Corp., Essex Junction, VT, USA ; Chapple-Sokoi, J. ; Pope, K.

Chemical-Mechanical Polishing (CMP) has emerged as the most important technique for achieving both local and global planarization in VLSI fabrication. One of the primary concerns in the use of CMP, however, is the efficient and complete removal of CMP contaminants such as slurry and polishing debris. This paper discusses the removal of alumina-based slurries utilized for the planarization technique of metal interconnect processes. The analysis of the treatment of the post-CMP metallized wafer surface with an aqueous solution, and the application of the chemical solution insitu to the polishing processes are presented

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI

Date of Conference:

2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.