Referenced Items are not available for this document.
The ground rule reduction of the dimensions used in semiconductor manufacturing has increased the number of yielding devices extending into the 3 mm edge exclusion area on the wafer. The use of a conventional topring for interlevel dielectric chemical-mechanical planarization was evaluated against an advanced topring. The advanced topring was designed to improve the post planarization film uniformity in the edge region. The use of the advanced topring for interlevel dielectric polishing was shown to improve the uniformity of polished films in this region. The improved film uniformity and edge profile resulted in increased device yield
Published in:
Advanced Semiconductor Manufacturing Conference and Workshop, 2000 IEEE/SEMI
Date of Conference: 2000
- Page(s):
- 419 - 421
- Meeting Date :
- 12 Sep 2000-14 Sep 2000
- ISSN :
- 1078-8743
- Print ISBN:
- 0-7803-5921-6
- INSPEC Accession Number:
- 6880774
- Conference Location :
- Boston, MA
- Digital Object Identifier :
- 10.1109/ASMC.2000.902621
- Product Type:
- Conference Publications
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