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Application of neural networks in microwave FET transistor noise modeling

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3 Author(s)
Markovic, V. ; Fac. of Electron. Eng., Nis Univ., Serbia ; Marinkovic, Z. ; Males-Ilic, N.

An application of neural networks in microwave FET transistor (MESFET) noise modeling is presented. A multilayer perceptron neural network is implemented to model four transistor noise parameters. Inputs for the neural models include small-signal intrinsic equivalent circuit elements, two equivalent temperatures and frequency, while outputs are noise parameters. Pospieszalski's approach is employed to characterize the noise parameters

Published in:

Neural Network Applications in Electrical Engineering, 2000. NEUREL 2000. Proceedings of the 5th Seminar on

Date of Conference:

2000

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