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Theory of near-field optics applied to semiconductor nanostructures

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3 Author(s)
Knorr, A. ; Dept. of Phys., Philipps-Univ., Marburg, Germany ; Hanewinkel, B. ; Koch, S.W.

Summary form only given. The optical response of nanostructured semiconductors around the bandgap is dominated by the properties of excitons in interface potentials fluctuating: on a mesoscopic length scale. On this length scale, scanning near-field optical microscopy (SNOM) extents the optical resolution to a fraction of the wavelength of light. The results of a finite difference time domain evaluation of Maxwell's equations for the near-field response of weakly quantum confined excitons is presented. In contrast to previous work, our approach is focused on the combined dynamics of spatial as well as time-resolved phenomena in semiconductor near-field optics. The analysis is applied to a series of relevant problems in the wide field of SNOM.

Published in:

Quantum Electronics and Laser Science Conference, 2000. (QELS 2000). Technical Digest

Date of Conference:

12-12 May 2000