GaAsSb-based alloys for long-wavelength lasers

We will review the growth, structural, and optical properties of GaAsSb QWs and the material gain improvement of lasers using modulation doping in the active region and the state-of-the-art device performance of GaAsSb VCSELs. We grew GaAsSb QWs with GaAs barriers on n-GaAs [100] substrates by using gas-source molecular beam epitaxy (GSMBE) and metal-organic vapor phase epitaxy (MOVPE).