By Topic

Self-consistent simulation and analysis of InGaN/GaN lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
J. Piprek ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; S. Nakamura

We analyze the performance of nitride Fabry-Perot laser diodes with two InGaN/GaN quantum wells. Those devices exhibit the lowest threshold current density (1.2 kA/cm2) as well as the highest output power (420 mW) reported thus far for room-temperature continuous-wave operation of nitride lasers. The active region includes an AlGaN electron stopper layer. It is sandwiched between GaN separate confinement layers and superlattice AlGaN/GaN cladding layers. The thickness of the n-side cladding layer was increased from 600 nm to 1200 nm to reduce the penetration of the laser light into the GaN substrate. In order to better understand performance limitations, we study this device using advanced laser simulation. The laser model self-consistently combines band structure and gain calculations with two-dimensional simulations of waveguiding, carrier transport, and heat flux. It considers carrier drift and diffusion including thermionic emission at hetero-boundaries. This allows for a study of vertical carrier leakage, lateral current spreading, and defect recombination. The reduction of such carrier losses is important to achieve less self-heating and higher output power

Published in:

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE  (Volume:2 )

Date of Conference:

2000