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InGaN laser diodes on SiC substrates

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6 Author(s)
A. Kuramata ; Fujitsu Labs. Ltd., Atsugi, Japan ; S. Kubota ; R. Soejima ; K. Domen
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Due to the difficulty in making large, high-quality bulk GaN crystals, the selection of a substrate for InGaN laser diodes is still an important problem to be considered. We have reported that SiC is very attractive for the reasons concerning cleavage, thermal and electrical conductivity. In this paper, we introduce the latest characteristics of InGaN laser diodes fabricated on SiC substrates. We also show that the high thermal conductivity of SiC effectively facilitates the heat dissipation from the devices

Published in:

Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE  (Volume:2 )

Date of Conference:

2000