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Hot electron injection laser: vertically integrated transistor-laser structure for high-speed, low-chirp direct modulation

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4 Author(s)
Hoskens, R.C.P. ; COBRA Inter-Univ. Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol., Netherlands ; van de Roer, T.G. ; Tolstikhin, V.I. ; Forster, A.

The first hot electron injection laser (HEL), a vertically integrated transistor-laser structure, is designed to investigate carrier-heating effects on the optical gain and wavelength chirp. Simulations show the potential of carrier-heating assisted gain-switching to directly modulate the optical field intensity at frequencies up to 100 GHz and to decrease the wavelength chirp. Lasing has been observed for the first time now at 70 K, with a threshold current density of about 1.7 kA/cm2, from the current AlGaAs-GaAs HEL with InGaAs bulk active layer

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Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE  (Volume:2 )

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