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Evaluation of high-T0 1.3 μm strained quantum well lasers on InGaAs ternary substrates by frequency response

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7 Author(s)
N. Sekine ; RWCP Opt. Interconnection Fujitsu Lab., Atsugi, Japan ; K. Otsubo ; Y. Nishijima ; O. Aoki
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We have fabricated 1.3 μm strained quantum well lasers on InGaAs ternary substrate. A low threshold current density of <80 A/cm 2/well and high T0 of >100 K were simultaneously realized. Furthermore, it was found that dg/dn of the sample was enhanced by the effect of the deep potential well. By improving the quality of InGaAs substrates, larger dg/dn should be obtainable

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Lasers and Electro-Optics Society 2000 Annual Meeting. LEOS 2000. 13th Annual Meeting. IEEE  (Volume:2 )

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