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Retention time improvement with angle ion implantation and buffered layer

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3 Author(s)
Yi Jae-Young ; Dept. of Control Eng. & Inf., Tech. Univ. Budapest, Hungary ; Lee Yong-Hui ; Yi Cheon-Hee

In this paper, we propose a novel method of optimizing the impurity concentration in N-junction region to reduce the local field-enhanced thermionic field emission current, resulting in an excellent tail distribution of retention time without trade-offs of cell transistor threshold voltage and operation current. The fabricated device has W/L=15/0.26, NMOSFET, shallow trench isolation, 7.0 nm wet and/or nitride gate oxide

Published in:

TENCON 2000. Proceedings  (Volume:3 )

Date of Conference:

2000