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Effect of rapid thermal annealing on the properties of ZrBx (TiBx)-Si contacts

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5 Author(s)
Boltovets, N.S. ; State Sci. & Res. Inst. Orion, Kiev, Ukraine ; Ivanov, V.N. ; Konakova, R.V. ; Milenin, V.V.
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We investigated heat tolerance of ZrBx-n-n+-Si and TiBx-n-n+-Si barrier contacts exposed to rapid (60 s) thermal annealing (RTA) in hydrogen atmosphere at T=400, 600, 800 and 950°C. Using XPS, AES and static I-V curve measurements, we have shown that ZrBx-n-n+-Si(TiBx-n-n+ -Si) contacts retain their layer structure and barrier properties after RTA at 950(600)°C

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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