By Topic

Effect of rapid thermal annealing on the properties of ZrBx (TiBx)-Si contacts

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Boltovets, N.S. ; State Sci. & Res. Inst. Orion, Kiev, Ukraine ; Ivanov, V.N. ; Konakova, R.V. ; Milenin, V.V.
more authors

We investigated heat tolerance of ZrBx-n-n+-Si and TiBx-n-n+-Si barrier contacts exposed to rapid (60 s) thermal annealing (RTA) in hydrogen atmosphere at T=400, 600, 800 and 950°C. Using XPS, AES and static I-V curve measurements, we have shown that ZrBx-n-n+-Si(TiBx-n-n+ -Si) contacts retain their layer structure and barrier properties after RTA at 950(600)°C

Published in:

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Date of Conference:

2000