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Long wavelength (1.02-1.03 μm) InGaAs/GaAs lasers fabricated by MBE

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6 Author(s)
T. Piwonski ; Inst. of Electron. Technol., Warsaw, Poland ; P. Sajewicz ; J. M. Kubica ; K. Reginski
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The operation of InGaAs/GaAs SCH SQW lasers emitting at the wavelength 1.02-1.03 μm, fabricated by MBE technology, is reported. Longer wavelength of emission was achieved by applying high indium content in the active region. The paper presents characteristics of fabricated structures measured at room temperature (T=300 K) under pulsed operation. The results are promising and give hope for fabricating structures emitting at 1.06 μm, which in some applications could replace diode pumped Nd:YAG lasers

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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