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Coordinate sensitive photodetectors based on InGaAs/InP heterostructures

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5 Author(s)
Budeanu, E. ; Inst. of Appl. Phys., Kishinev, Moldova ; Grozescu, I. ; Purica, M. ; Rusu, E.
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The dependence of the longitudinal photo-e.m.f. in In0.53 Ga0.47As p-n junctions on the coordinate x of the light spot and temperature has been investigated. A linear dependence Vphl=f(x) has been observed and the Vphl temperature dependence in the 100-300 K range is determined by the carrier mobility change. A quadrant p-i-n photodiode based on an InP/InGaAs/InP heterostructure was fabricated and its electrical characteristics studied. The photodetector shows wide spectral characteristics (0.9-1.7 μm) with a responsivity of each element of 0.62 A/W and a slope of the inversion characteristics of K=(0.8-1.0) 10 3 V/

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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