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Poly Si/Ni(Pt) thin film resistance temperature sensors on GaAs

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4 Author(s)
Lalinsky, T. ; Inst. of Electr. Eng., Czechoslovak Acad. of Sci., Bratislava, Slovakia ; Hrkut, P. ; Mozolova, Z. ; Kovacik, T.

Ni and Pt resistance temperature sensors on GaAs with an interfacial poly Si thin film as a diffusion barrier were prepared and analyzed. An optimal thickness of the poly Si interfacial barrier layer was investigated in relation to the sensor thermal sensitivity and stability. High thermal performance and stability of the temperature sensors were obtained and confirmed by preliminary reliability tests at 150°C for times up to 250 hours

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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