By Topic

Delta-doped layer influence on Schottky diodes parameters

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

1 Author(s)
Osvald, J. ; Inst. of Electr. Eng., Czechoslovak Acad. of Sci., Bratislava, Slovakia

We studied the influence of planar δ-doping on the parameters of Schottky diodes. It is shown that a δ-layer with the same type of conductivity as a base semiconductor material has no significant influence on the diode parameters. Changing the potential barrier shape after insertion of the δ-doped layer influences the diode current only slightly. Significant changes were found for Schottky diodes with δ-doped layers of opposite type conductivity compared with the base semiconductor. The resulting barriers are higher and depend on both the δ-doped layer position and the doping concentration

Published in:

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Date of Conference:

2000