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Delta-doped layer influence on Schottky diodes parameters

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1 Author(s)
J. Osvald ; Inst. of Electr. Eng., Czechoslovak Acad. of Sci., Bratislava, Slovakia

We studied the influence of planar δ-doping on the parameters of Schottky diodes. It is shown that a δ-layer with the same type of conductivity as a base semiconductor material has no significant influence on the diode parameters. Changing the potential barrier shape after insertion of the δ-doped layer influences the diode current only slightly. Significant changes were found for Schottky diodes with δ-doped layers of opposite type conductivity compared with the base semiconductor. The resulting barriers are higher and depend on both the δ-doped layer position and the doping concentration

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Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

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