Carbon based layers such as silicon carbide (SiC) and diamond-like carbon (DLC) layers were obtained by CVD methods. The properties of these layers were investigated in order to establish the optimum preparation conditions for different microsystems applications. So, silicon membranes using α-SiC or DLC layers as etching mask, as well as silicon carbide membranes using a combined porous silicon-DLC structure were fabricated for sensor applications. A detailed evaluation of the field emission (FE) properties of these films was done to demonstrate their capability to be used in field emission devices
Published in:
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
(Volume:2
)
Date of Conference: 2000