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Investigation on optical and electrical properties of LPCVD SiOxNy thin films

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4 Author(s)
Modreanu, M. ; Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania ; Gartner, Mariuca ; Szekeres, A. ; Alexandrova, S.

Amorphous silicon oxynitride (a-SiOxNy) films of various compositions were deposited by low-pressure chemical vapour deposition (LPCVD) at temperature range of 820-880°C and 400 mTorr, using mixture of SiCl2H2-NH3N 2O. The investigation on optical and electrical properties was made using spectroellipsometry (SE) and the analyses of 1 MHz capacitance-voltage characteristics. To calculate optical and microstructural parameters of the films we used different approaches (Bruggeman-EMA, Cauchy, Sellmeier and Wemple-Di Domenico). The observed low densities of the interface traps are attributed to the nitrogen incorporation at the SiOxNy/Si interface which leads to suppression of their generation

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Semiconductor Conference, 2000. CAS 2000 Proceedings. International  (Volume:2 )

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