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Temperature effect on photoluminescence excitation process of porous silicon

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8 Author(s)
Korsunskaya, N.E. ; Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine ; Torchinskaya, T.V. ; Dzhumaev, B.R. ; Khomenkova, I.Yu.
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It is shown that temperature transformation of photoluminescence and photoluminescence excitation spectra are caused by presence of two different excitation channels. Photoluminescence intensity decrease under cooling is explained by impediment of energy transfer from adsorbent to luminescence centers while its increase under excitation via other channel is observed under cooling

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Semiconductor Conference, 2000. CAS 2000 Proceedings. International  (Volume:2 )

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