Novel design structure for a dual-drain MOSFET magnetic sensor integrated in SOI

A new MOS magneto-transistor design structure is proposed. The device is intended to be fabricated in SOI-MOSFET technology and has a geometry design based on the traditional concept of dual-drain MOS magneto-transistor. In the present SOI-MOSFET variant, this configuration consists in symmetrically placing the source between gates and drains. To prevent the floating-body effect in SOI structure, a backside gate positively biased is used. Doping levels were chosen from SUPREM technology program simulations and dimensions are chosen to agree with the actually given technology in which this device could be fabricated. The device structure was simulated with PISCES program and the simulation results regarding device performance were compared with some experimental data for similar devices reported in literature.