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New approach to calculation the transit time in fast silicon photodiodes operating at low-voltage bias

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2 Author(s)
Malik, A. ; Dept. de Electron., Inst. Nacional de Astrofisica, Opt. y Electron., Puebla, Mexico ; Aceves, M.

In this paper, a new approach is presented for the transit time calculations in fast silicon planar photodiodes operating at low-voltage bias. It is shown that at a given voltage bias the transit time has a minimal value at certain carrier concentrations in the high-resistive layer. Results presented are useful for correct design optimization of the device

Published in:
Semiconductor Conference, 2000. CAS 2000 Proceedings. International  (Volume:2 )

Date of Conference: 2000

Page(s):
385 - 388 vol.2
Meeting Date :
10 Oct 2000-14 Oct 2000
Print ISBN:
0-7803-5885-6
INSPEC Accession Number:
6839313
Conference Location :
Sinaia
Digital Object Identifier :
10.1109/SMICND.2000.889116
Product Type:
Conference Publications

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