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Nonlinear analytical model of the MRC (MOS resistive circuit)

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4 Author(s)
E. Vidal ; Dept. of Electron. Eng., Univ. Politecnica de Catalunya, Barcelona, Spain ; H. Martinez ; E. Alarcon ; A. Poveda

We analyze the significant departures between the predicted behavior and the actual performance of MOS Resistive Circuit cells (MRC) due to mobility degradation. These effects are mainly a difference in the value of the resistance implemented, and a nonlinear behavior. A model including these effects is proposed and shown to work through an example

Published in:

Circuits and Systems, 1999. 42nd Midwest Symposium on  (Volume:2 )

Date of Conference: