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A relaxation-time based MOSFET model for HF amplifier design

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2 Author(s)
A. Y. El-Sherif ; Dept. of Electr. Eng., Southern Methodist Univ., Dallas, TX, USA ; K. L. Ashley

The relaxation time of a physically based non-quasi-static (NQS) MOSFET model is investigated with emphasis on the empirical approach used in the BSIM3v3 NQS model. The 50-Ω S parameters of a 1.0-μm RF MOSFET are determined using our model in SPICE and compared to those obtained experimentally. A high-frequency OTA is designed and realized in a modern RF CMOS technology. The circuit is then analyzed and simulated to study the validity of the HF performance of our model in contrast to the available BSIM3v3 NQS and QS MOSFET models. Our NQS model has provided realistic simulation results, which meet our expectations based on analysis and theory

Published in:

Circuits and Systems, 1999. 42nd Midwest Symposium on  (Volume:2 )

Date of Conference: