The study of nonlinear optical effects of GaN and AlGaN epitaxial films

Summary form only given. Here we report the study of nonlinear optical effects and waveguide modes of wide-bandgap and band-gap tunable semiconductor GaN and Al/sub x/Ga/sub 1-x/N epitaxial films. Low-pressure metalorganic vapor deposition (MOCVD) was used to grow epitaxial GaN and AlGaN layers on (0001) sapphire substrate. The UV absorbance spectra of a GaN film (with thickness 2.1 /spl mu/m) is shown.