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A Si BiCMOS trans-impedance amplifier for 10 Gb SONET receiver

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4 Author(s)
H. H. Kim ; Lucent Technol. Bell Labs., Holmdel, NJ, USA ; S. Chandrasekhar ; C. Burrus ; J. Bauman

A trans-impedance amplifier integrated with an InP PIN photodiode has been demonstrated for 10 Gb SONET receiver. The shunt feedback trans-impedance amplifier is fabricated in 0.25 /spl mu/m modular Si BICMOS technology. The feedback resistance of 870 /spl Omega/ is achieved with a bandwidth of 8.5 GHz. The sensitivity of the trans-impedance amplifier at 10 Gb/s is -17 dBm at a bit-error-rate (BER) of 10/sup -12/ with 2/sup 31/-1 pseudo-random bits.

Published in:

VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on

Date of Conference:

15-17 June 2000