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A 2 dB NF, fully differential, variable gain, 900 MHz CMOS LNA

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5 Author(s)
Sacchi, E. ; STMicroelectron., Pavia, Italy ; Bietti, I. ; Gatta, F. ; Svelto, F.
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A fully differential 900 MHz CMOS LNA using, as input stage, nMOS and pMOS inductively degenerated pairs, in shunt configuration, achieves the following performance: 2 dB NF, 22 dB voltage gain, -3 dBm IIP3 with 8 mA current consumption. As additional feature of this LNA is a variable gain. Measurements have been performed on packaged dies. No external components are used, except for an SMD inductor (used for tuning purposes), placed in series with the on-chip gate spiral inductor.

Published in:

VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on

Date of Conference:

15-17 June 2000