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Where does memory go in the 21C? (Evolution and revolution of memory technology)

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1 Author(s)
C. G. Hwang ; Samsung Electron. Co. Ltd., Kyungki, South Korea

For the new millennium, several "third" dimensional approaches in the memory area will take place with continuous revolutionary development from current technologies for various customers' demands. In the mean time, various and combined evolutionary technologies such as micro-machining technology, multi-chip stacking techniques, mixed digital/analog circuits, merged memories on a chip, cloning and genetics, biochemistry and magnetics areas are awaiting a breakthrough and will be pursued toward the generic memory goals of high density, high speed and low power more closely.

Published in:

VLSI Circuits, 2000. Digest of Technical Papers. 2000 Symposium on

Date of Conference:

15-17 June 2000