By Topic

Low-power all-optical gate based on sum frequency mixing in APE waveguides in PPLN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Parameswaran, K.R. ; Edward L. Ginzton Lab., Stanford Univ., CA, USA ; Fujimura, M. ; Chou, M.H. ; Fejer, M.M.

We present an all-optical gate implemented in periodically poled lithium niobate (PPLN) (LiNbO3). Efficient mixing is achieved by using a phase-matched guided-wave interaction. A control wave at 1.537 μm is used to gate a signal at 1.552 μm, where a control power of 185 mW is sufficient to achieve 96% depletion of a low-power signal. A simple switch configuration is described whereby high-contrast low-power all-optical switching can be performed.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 6 )