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We propose a novel vertical-cavity surface emitting laser (VCSEL) with Al(Ga)As multi-oxide layer (MOX) structure for the purpose of enlarging window aperture maintaining single transverse mode operation. We have fabricated an InGaAs-GaAs VCSEL with the proposed MOX structure formed on GaAs (311)B substrate. We have performed a numerical simulation to investigate single-mode behavior of the proposed structure and showed a possibility of single-mode VCSEL's with a large active area. We have fabricated an 11-μm current aperture 960-nm wavelength VCSEL with this MOX structure. The threshold current and voltage were 1.0 mA and 2.0 V, respectively, which are comparable to those of conventional oxide VCSELs. In 8-μm aperture, single-mode operation was maintained with a driving current up to four times the threshold.