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Multi-oxide layer structure for single-mode operation in vertical-cavity surface-emitting lasers

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6 Author(s)
Nishiyama, N. ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan ; Arai, M. ; Shinada, S. ; Suzuki, K.
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We propose a novel vertical-cavity surface emitting laser (VCSEL) with Al(Ga)As multi-oxide layer (MOX) structure for the purpose of enlarging window aperture maintaining single transverse mode operation. We have fabricated an InGaAs-GaAs VCSEL with the proposed MOX structure formed on GaAs (311)B substrate. We have performed a numerical simulation to investigate single-mode behavior of the proposed structure and showed a possibility of single-mode VCSEL's with a large active area. We have fabricated an 11-/spl mu/m current aperture 960-nm wavelength VCSEL with this MOX structure. The threshold current and voltage were 1.0 mA and 2.0 V, respectively, which are comparable to those of conventional oxide VCSELs. In 8-/spl mu/m aperture, single-mode operation was maintained with a driving current up to four times the threshold.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 6 )

Date of Publication:

June 2000

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