By Topic

A non-destructive method of testing for radiation hardness of integrated circuits

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Awipi, M. ; Dept. of Electr. & Comput. Eng., Tennessee State Univ., Nashville, TN, USA ; Drews, S.

There has existed a long-standing need to design integrated circuits that withstand the effects of ionizing radiation as part of the effort to obtain radiation hardened electronic systems. The results of design efforts require testing to verify the degree of radiation hardness achieved. But testing that involves the application of ionizing radiation directly is destructive and can only be applied during product development. In this paper, we have proposed a non-destructive method of testing for radiation hardness of integrated circuits using high magnetic fields. Experimental data is included to show the correlation between the effects of ionizing radiation and high magnetic fields on the current-voltage characteristics of transistors and the input-output voltage transfer characteristics of logic gates. A preliminary estimate is made that 8 T of magnetic fields can produce the same effect as 1 Megarad (Si) of total ionizing radiation dose for testing purposes

Published in:

Southeastcon 2000. Proceedings of the IEEE

Date of Conference: