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Ultrathin-body SOI MOSFET for deep-sub-tenth micron era

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7 Author(s)
Choi, Yang-Kyu ; Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA ; Asano, K. ; Lindert, N. ; Subramanian, Vivek
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A 40-nm-gate-length ultrathin-body (UTB) nMOSFET is presented with 20-nm body thickness and 2.4-nm gate oxide. The UTB structure eliminates leakage paths and is an extension of a conventional SOI MOSFET for deep-sub-tenth micron CMOS. Simulation shows that the UTB SOI MOSFET can be scaled down to 18-nm gate length with <5 nm UTB. A raised poly-Si S/D process is employed to reduce the parasitic series resistance.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 5 )