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Design of 25-nm SALVO PMOS devices

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3 Author(s)
Vuong, H.H. ; Bell Labs., Lucent Technol., Murray Hill, NJ, USA ; Chang, C.P. ; Pai, C.S.

The concept and preliminary designs of novel self-aligned local-channel V-gate by optical lithography (SALVO) devices are presented. SALVO uses optimized local-channel doping to sharpen the lateral junctions, in order to minimize short channel effects for gate lengths down to 25 nm. In addition, it utilizes the replacement-gate design with inner spacers to facilitate integration of alternative gate stack materials and to extend the application of optical lithography. SALVO PMOS designs with both metal gate and poly-metal gate electrodes were studied, the latter proving capable of delivering high performance 25 nm PMOS with currently manufacturable processes.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 5 )