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A novel flash EEPROM cell based on trench technology for integration within power integrated circuits

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8 Author(s)
D. M. Garner ; Dept. of Eng., Cambridge Univ., UK ; Y. Chen ; L. Sabesan ; G. A. J. Amaratunga
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A flash EEPROM suitable for integration within power integrated circuits (PIC's) is presented. The EEPROM cell uses a trench floating gate to give a large gate charge while using no more silicon area than a conventional flash EEPROM cell. The cell shows good immunity against the induced disturbance voltages which are present in a PIC, and the storage lifetime is greater than ten years at a reading voltage of V/sub D/=2.2 V.

Published in:

IEEE Electron Device Letters  (Volume:21 ,  Issue: 5 )