Referenced Items are not available for this document.
AlGaAs emitter heterojunction bipolar transistors (HBTs) are demonstrated to have excellent dc and RF properties comparable to InGaP/GaAs HBTs by increasing the Al composition. Al/sub 0.35/Ga/sub 0.65/As/GaAs HBTs exhibit very high dc current gain at all bias levels, exceeding 140 at 25 A/cm/sup 2/ and reaching a maximum of 210 at 26 kA/cm/sup 2/ (L=1.4 /spl mu/m/spl times/3 /spl mu/m, R/sub sb/=330 /spl Omega///spl square/). The temperature dependence of the peak dc current gain is also significantly improved by increasing the AlGaAs mole fraction of the emitter. Device analysis suggests that a larger emitter energy gap contributes to the improved device performance by both lowering space charge recombination and increasing the barrier to reverse hole injection.
Published in:
Electron Device Letters, IEEE
(Volume:21
,
Issue:
5
)
Date of Publication: May 2000
- Page(s):
- 196 - 199
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 6607154
- Digital Object Identifier :
- 10.1109/55.841294
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- May 2000
- Sponsored by :
- IEEE Electron Devices Society
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