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Analysis by measurements and circuit simulations of the PT- and NPT-IGBT under different short-circuit conditions

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3 Author(s)
M. Cotorogea ; Centro Nacional de Invest. y Desarrollo Tecnologico, Morelos, Mexico ; A. Claudio ; J. Aguayo

An analysis of the behavior of 600 V PT and NPT IGBTs under following cases of short circuit is reported: (1) the short circuit occurs before the device actively turns on; (2) the short circuit occurs when the device is conducting; and (3) as case (1), but operating at low intermediate voltage and with high stray inductance. The analysis is performed using both experimental results and SPICE-simulations

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Applied Power Electronics Conference and Exposition, 2000. APEC 2000. Fifteenth Annual IEEE  (Volume:2 )

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