Referenced Items are not available for this document.
A novel technique for non-volatile digital data storage is presented. Data storage is implemented using bipolar transistors manufactured in a standard CMOS process. The technique can operate at lower voltages than conventional standard-CMOS EEPROM devices. This technique can also be used for non-volatile analogue data storage and can be implemented in BiCMOS or bipolar processes as well as standard-CMOS, allowing for the production of cheap embedded EEPROMs
Published in:
Africon, 1999 IEEE
(Volume:2
)
Date of Conference: 1999
- Page(s):
- 1161 - 1162 vol.2
- Meeting Date :
- 28 Sep 1999-01 Oct 1999
- Print ISBN:
- 0-7803-5546-6
- INSPEC Accession Number:
- 6506424
- Conference Location :
- Cape Town
- Digital Object Identifier :
- 10.1109/AFRCON.1999.821942
- Product Type:
- Conference Publications
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