Cart (Loading....) | Create Account
Close category search window
 

A BSIM3-based flat-band voltage perturbation model for RTS and 1/f noise

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Martin, S. ; Conexant, Newport Beach, CA, USA ; Li, G.P. ; Guan, H. ; D'Souza, S.

Recently, a new random telegraph signal (RTS) noise model for the drain current fluctuations (/spl Delta/I/sub d/) associated with single-carrier trapping and detrapping has been developed from a flat-hand voltage perturbation (/spl Delta/V/sub fb/) of the BSIM3 current-voltage (I-V) model (Martin et al., 1997). The model's accuracy in predicting the gate bias and geometry dependence of RTS magnitudes has been verified and summarized. In this letter, the perturbation model has been extended to yield a new formulation for the scattering coefficient (/spl alpha/) which predicts the magnitude and bias dependence of 1/f noise without fitting parameters. The absence of fitting parameters allows for a direct determination of the oxide trap density (N/sub t/(E/sub fn/)) from 1/f noise measurements. Results suggest that the BSIM3-based model accurately predicts the bias and geometry dependence of 1/f noise, that N/sub 2/O annealing may significantly increase the oxide trap density at strong inversion and that the bias dependence of N/sub t/(E/sub fn/) contains most of the 1/f noise dependence upon V/sub g/.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 1 )

Date of Publication:

Jan. 2000

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.