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Demonstration of a 77-GHz heterojunction bipolar transferred electron device

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5 Author(s)
Twynam, J.K. ; Adv. Technol. Res., Sharp Corp., Nara, Japan ; Yagura, M. ; Takahashi, N. ; Suematsu, E.
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We demonstrate for the first time a heterojunction bipolar transferred electron device (HBTED), a device with a bipolar transistor-like structure in which Gunn oscillations occur. The use of a graded doping profile in the collector region is, we believe, a key factor in the device design. AlGaAs/GaAs HBTEDs fabricated on semi-insulating GaAs substrates exhibit free-running oscillations at a frequency of around 77 GHz. The third (emitter) terminal enables this device to be injection-locked and to function as a self-oscillating mixer.

Published in:

Electron Device Letters, IEEE  (Volume:21 ,  Issue: 1 )