By Topic

Oxidised porous silicon waveguide technology for silicon optoelectronics

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

11 Author(s)
M. Balucani ; Dipt. di Ingegneria Elettronica, Rome Univ., Italy ; V. Bondarenko ; E. Fazio ; G. Lamedica
more authors

The work presented, that is a part of the ongoing European project OLSI no. 28934, overcomes problems by an OPSWG (oxidized porous silicon waveguide). In order to provide confinement and propagation of light within the waveguide (WG), the guiding region (core) has to have a higher refractive index than the surrounding cladding regions. Such construction of a WG can be provided by a variation of anodization regimes during the PS (porous silicon) formation. The technological process of the OPSWG fabrication consists of three main steps: (a) anodization of Si through the openings in a mask to form PS; (b) thermal oxidation of PS; (c) high temperature densification of OPS

Published in:

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting  (Volume:2 )

Date of Conference: