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Electron trapping time versus annealing temperature in low temperature grown GaAs

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5 Author(s)
Sun, Chi-Kuang ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan ; Juen-Chen Wang ; Tze-Ming Liu ; Yi-Jen Chiu
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We report in our study the carrier trapping time versus different annealing temperature, which will be important for LT-GaAs application on high speed telecommunication devices. The samples investigated are l-μm-thick MBE-grown LT-GaAs films sandwiched between two AlAs layers with a growing temperature of 220 C

Published in:

LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting  (Volume:2 )

Date of Conference:

1999