By Topic

Strongly buckled square micromachined membranes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Ziebart, V. ; Phys. Electron. Lab., Eidgenossische Tech. Hochschule, Zurich, Switzerland ; Paul, O. ; Baltes, H.

The buckling of compressively prestressed square membranes with built-in edges is investigated experimentally and analyzed theoretically. The buckling depends weakly on Poisson's ratio and essentially is a function of the reduced prestrain, ε¯0 0a2/h2, where ε0 is the physical prestrain, a is the width, and h is the thickness of the membrane. As ε¯0 becomes increasingly negative, the membrane undergoes two symmetry breaking buckling transitions. Beyond the first transition occurring at ε¯cr1, the buckling profile has all the reflection and rotation symmetries of a square. The reflection symmetries are lost through a second instability transition at ε¯cr2. The bifurcation points, ε¯cr1 and ε¯cr2, and buckling profiles were calculated using analytical energy minimization and nonlinear finite-element simulation. Both methods agree. The buckling of micromachined plasma-enhanced chemical vapor deposition silicon nitride membranes on a silicon wafer is interpreted in terms of the theoretical results. Good matching between measured and calculated buckling profiles is found. The extracted strain values are consistent irrespective of the size and buckling mode of the membranes. From the average strain across the wafer ε0=-3.50×10-4 and complementary wafer curvature measurements, a Young's modulus of 130 GPa is deduced. Methods for the straightforward extraction of ε0 from experimental center deflections of buckled square membranes are described

Published in:

Microelectromechanical Systems, Journal of  (Volume:8 ,  Issue: 4 )