By Topic

Improving throughput in 0.25 /spl mu/m technology development and manufacturing - CVD TiN liner barrier applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Brennan, B. ; Adv. Micro Devices Inc., Austin, TX, USA ; Rivera, W. ; Christian, C. ; Kin Sang Lam
more authors

During 0.25 /spl mu/m process development and transfer, functional yields were not obtained until the CVD TiN liner barrier process applications were used at five of the six barrier-levels. The process transfer and capital equipment plan did not comprehend this required technology improvement, resulting in these CVD TiN tools becoming a constraint. Aggressive capital equipment installations and manufacturing technology initiatives were implemented to provide the needed capacity to support the ramp plan. Integrated CVD TiN focus teams were sanctioned and chartered to improve the operation productivity. These efforts and results eliminated this tool set from becoming a technology or capacity constraint.

Published in:

Semiconductor Manufacturing Conference Proceedings, 1999 IEEE International Symposium on

Date of Conference:

11-13 Oct. 1999