By Topic

Alignment optimization and residual analysis for critical DUV photolithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Putnam, C. ; Nikon Precison Inc, Manassas, VA, USA ; Tyminski, J.K. ; Batterson, R. ; Gallo, A.

This work examines the alignment residual data for photolithography imaging in relationship to the maximum-minimum measured overlay values with linear factors corrected. Within the scope of this work, the relationships of maximum and minimum overlay vectors are examined instead of a three-sigma value characterizing the overlay. (The maximum vector is very close to a three sigma number, and the effective analysis would not be very different if three-sigma metric had been considered.) Such evaluation can lead to the understanding of what levels of alignment residuals are required to meet corresponding overlay budgets. It can be used to choose the alignment strategy or as a filter of real-time production alignment data

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI

Date of Conference:

1999