By Topic

Comparison of κ<3 silicon oxide-based dielectric pre-copper metallization preclean processes using black diamond

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Mandal, R.P. ; Appl. Mater. Inc., Santa Clara, CA, USA ; Cheung, D. ; Yau, Wai-Fan ; Cohen, B.
more authors

Low dielectric constant silicon oxide-based films which incorporate a high density of nanometersized pores are receiving widespread attention because of a combination of compelling attributes. Plasma processes which are used to clean copper pads at the bottom of vias prior to copper diffusion barrier film deposition are examined with respect to their effect on a PECVD low density silicon-oxide-based low-κ film. Reactive preclean using 5%H2/95%He is best for these low-κ silicon oxide-based films, for both plasma overashed films (resulting from photoresist removal) and unashed films, compared to sputter precleaning and reactive precleaning using 10%H2/90%He. Lower reactive preclean coil power and shorter preclean times result in the lowest increase in dielectric constant

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1999 IEEE/SEMI

Date of Conference:

1999