Development of copper etch technology for advanced copper interconnects

Recent development efforts in copper etch processing show promising results in many areas that have posed significant challenges for this new technology. We report on the etch performance for features down to 0.25 /spl mu/m with aspect ratios greater than 2:1. Copper etch rates of over 5000 /spl Aring//min have been achieved, and corrosion-free post copper etch performance has been demonstrated for periods in excess of two weeks. Electrical and device yield tests were conducted and presented in detail.