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A 7F/sup 2/ cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4 Gb DRAM's

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21 Author(s)
Hoenigschmid, H. ; Siemens Microelectron., IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA ; Frey, A. ; DeBrosse, J. ; Kirihata, T.
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A 7F/sup 2/ DRAM cell and corresponding vertically folded bitline architecture has been fabricated using a 0.175 /spl mu/m CMOS technology. This concept features an advanced 30/spl deg/ tilted array device layout and an area penalty free inter BL twist. The presented scheme minimizes local well noise by maximizing the number of twisting intervals.

Published in:

VLSI Circuits, 1999. Digest of Technical Papers. 1999 Symposium on

Date of Conference:

17-19 June 1999

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