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Low operating current and high-temperature operation of 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned structure

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6 Author(s)
Imafuji, O. ; Semicond. Device Res. Center, Matsushita Electron. Corp., Osaka, Japan ; Fukuhisa, Toshiya ; Yuri, M. ; Mannoh, Masaya
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Low operating current and high-temperature operation has been demonstrated in 650-nm AlGaInP high-power laser diodes with real refractive index guided self-aligned (RISA) structure. The RISA structure features an Al0.5In0.5P current blocking layer, which leads to small internal loss in the waveguide and substantially reduced operating carrier density. The resultant operating current for 50-mW continuous-wave at 70°C is as low as 98 mA, which is almost a half of the lowest value ever reported

Published in:

Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 3 )

Date of Publication:

May/Jun 1999

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