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The temperature dependence of 1.3- and 1.5-μm compressively strained InGaAs(P) MQW semiconductor lasers

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4 Author(s)
Phillips, A.F. ; Dept. of Phys., Surrey Univ., Guildford, UK ; Sweeney, S.J. ; Adams, A.R. ; Thijs, P.J.A.

We have studied experimentally and theoretically the spontaneous emission from 1.3- and 1.5-μm compressively strained InGaAsP multiple-quantum-well lasers in the temperature range 90-400 K to determine the variation of carrier density n with current I up to threshold. We find that the current contributing to spontaneous emission at threshold IRad is always well behaved and has a characteristic temperature T0 (IRad)≈T, as predicted by simple theory. This implies that the carrier density at threshold is also proportional to temperature. Below a breakpoint temperature TB, we find I α nZ, where Z=2. And the total current at threshold Ith also has a characteristic temperature T0 (Ith)≈T, showing that the current is dominated by radiative transitions right up to threshold. Above TB, Z increases steadily to Z≈3 and T0 (Ith) decreases to a value less than T/3. This behavior is explained in terms of the onset of Auger recombination above TB; a conclusion supported by measurements of the pressure dependence of Ith. From our results, we estimate that, at 300 K, Auger recombination accounts for 50% of Ith in the 1.3-μm laser and 80% of Ith in the 1.5-μm laser. Measurements of the spontaneous emission and differential efficiency indicate that a combination of increased optical losses and carrier overflow into the barrier and separate confinement heterostructure regions may further degrade T0 (Ith) above room temperature

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:5 ,  Issue: 3 )