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Student realization in cleanroom of silicon-germanium thin film transistors

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5 Author(s)
Guillet, D. ; Groupe de Microelectron. Visualisation, Rennes I Univ., France ; Mourgues, K. ; Rogel, R. ; Lhermite, H.
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This tutorial is intended for graduate students specialized in microelectronics formation. This training allows the student to fabricate a simple but original device. A thin film transistor for which the active layer is made of silicon-germanium alloy has been fabricated and electrically characterized. This experiment allows the student to work on several types of process step and to evaluate the role of the active layer on the electrical characteristics of a transistor

Published in:

Microelectronic Systems Education, 1999. MSE'99. IEEE International Conference on

Date of Conference:

1999