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Introduction of ramp-type technology in HTS quasiparticle injection devices

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4 Author(s)
Moerman, R. ; Dept. of Appl. Phys., Twente Univ., Enschede, Netherlands ; Veldhuis, D. ; Gerritsma, G.J. ; Rogalla, H.

Injection of quasiparticles with an energy larger than the superconducting gap into a superconducting strip results in breaking of Cooper-pairs and hence the suppression of the superconducting properties. Experiments using planar injection devices made of HTS materials with various barrier materials showed current gains varying from 2 up to 15 at 77 K. By changing the junction size and therefore the superconducting volume the current gain could be increased. A further reduction of the junction volume is very difficult using the planar device geometry. However, by applying the ramp-type technology it is possible to reduce the junction volume by at least one order of magnitude and a further increase in current gain is expected. Another advantage of this technology is the formation of in-situ barriers and electrodes and hence a better control of the junction characteristics should be possible, also the compatibility with the processes involved making RSFQ devices can be interesting for later applications. We have fabricated ramp-type injection devices, using various types of barriers. Characterization of these devices has been performed and the results of these experiments will be presented and discussed.

Published in:

Applied Superconductivity, IEEE Transactions on  (Volume:9 ,  Issue: 2 )

Date of Publication:

June 1999

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